Measurement of filling-factor-dependent magnetophonon resonances in graphene using Raman spectroscopy.
نویسندگان
چکیده
We perform polarization-resolved Raman spectroscopy on graphene in magnetic fields up to 45 T. This reveals a filling-factor-dependent, multicomponent anticrossing structure of the Raman G peak, resulting from magnetophonon resonances between magnetoexcitons and E(2g) phonons. This is explained with a model of Raman scattering taking into account the effects of spatially inhomogeneous carrier densities and strain. Random fluctuations of strain-induced pseudomagnetic fields lead to increased scattering intensity inside the anticrossing gap, consistent with the experiments.
منابع مشابه
Filling-factor-dependent magnetophonon resonance in graphene.
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عنوان ژورنال:
- Physical review letters
دوره 110 22 شماره
صفحات -
تاریخ انتشار 2013